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Kinetics of the persistent photocurrent in a-Si:H

Author Name : Ruben Jeronimo Freitas, ST., M.Eng, Sc
Category : Internasional Publication
Published in : Japaun 2016
Publication File : No File Uploaded
Link : http://www.worldscientific.com/doi/10.1142/S0217979216500752


Although the persistent photocurrent (PPC) in amorphous hydrogenated amorphous silicon (a-Si:H) is known to be dominated by dispersive recombination kinetics which produce the power low decay, t−β">tβt−β, where β(<1.0)">β(<1.0)β(<1.0) is the dispersion parameter, the reason for the occurrence of the dispersive reaction is not clear. We discuss the origin of the dispersive nature in the PPC in a-Si:H. It is shown that band edge modulation due to microscopic inhomogeneity may play an important role in the PPC dynamics.

Keywords: Hydrogenated amorphous silicon; persistent photocurrent; residual photocurrent decay; dispersive recombination kinetics

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