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ISSN : 2617 - 4944 (Print)
ISSN : 2617 - 4952 (Online)
| Author | : Constantino Pires Pereira , JBR. Fernandes Cabral |
| Full Paper Access | : file doesn't exist |
| Views | : 54 |
Abstract: This paper presents the power-loss analysis of the power transistor TIP147 and Power MOSFET IRF250N applied in DC/DC buck boost converter. Static and dynamic characteristics of the existing power semiconductor devices are described. Theoretical calculation of the power semiconductor devices based on manufacturer specification and its application to a DC-DC buck boost converter are presented. A simulation and a comparative analysis with the theoretical calculation produces which device is better to use in a low and high frequency ranges of operation.
Key-words: power loss analysis, power semiconductor devices.
