FECT

Although the persistent photocurrent (PPC) in amorphous hydrogenated amorphous silicon (a-Si:H) is known to be dominated by dispersive recombination kinetics which produce the power low decay, t−β">t−βt−β, where β(<1.0)">β(<1.0)β(<1.0) is the dispersion parameter, the reason for the occurrence of the dispersive reaction is not clear. We discuss the origin of the dispersive nature in the PPC in a-Si:H. It is shown that band edge modulation due to microscopic inhomogeneity may play an important role in the PPC dynamics.